早在1973年，SEMI就開始與會員公司一起制定晶圓尺寸等半導體行業標準，目前已有800多條國際標準在半導體制造、平板顯示等多項領域得到普遍運用。

從2007年開始，隨著光伏行業的蓬勃發展，SEMI開展推動在光伏領域的標準制定工作。目前已經成立了北美、歐洲、日本、臺灣地區在內的技術委員會，接近20個任務小組或工作小組，覆蓋了包括硅材料、硅片、晶體電池、晶體組件、薄膜、原材料、測試方法、設備接口等在內的多個領域。

截止2010年10月18日，SEMI已共計發布了23條光伏行業相關標準，在全球業界得到廣泛應用和推崇。這些SEMI光伏行業標準包括：

. E10-0304E——設備可靠性、可用性和可維護性定義說明：Specification for Definition and Measurement of Equipment Reliability, Availability, and Maintainability (RAM)

. F47-0706——半導體工藝設備電壓暫降預防說明：Specification for Semiconductor Processing Equipment Voltage Sag Immunity

. F108-0310——用于半導體、平板顯示、太陽能電池制造的液體化學試劑管道傳送部件指南：Guide for Integration of Liquid Chemical Piping Components for Semiconductor, Flat Panel Display, and Solar Cell Manufacturing Applications

. M6-1108——用于制造光伏電池的硅晶圓規格說明：Specification for Silicon Wafers for Use as Photovoltaic Solar Cells

. M44-0305——硅中間隙氧轉化因素指南：Guide to Conversion Factors for Interstitial Oxygen in Silicon

. ME391-0310——利用穩態表面光電壓測試方法測量非本征半導體中少數載流子擴散長度的方法：Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovotake

. MF1188-1107——利用短基線紅外吸收法測量硅中間隙氧含量的方法：Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline

. MF1619-1107——利用在布魯斯特角進行p型極化入射獲得紅外吸收光譜測量硅晶圓中間隙氧含量的測試方法：Test Method for Measurement of Interstitial Oxygen Content

of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle

. MF1727-0304——檢測拋光硅晶圓中因氧化導致缺陷的操作方法：Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers

. MF 1809-0704——表征硅中結構性缺陷的刻蝕方案的選擇與使用指南：Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

. MF 1810-0304——硅中優先刻蝕或綴飾的表面缺陷的計量測試方法：Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers

. PV1-0709——利用高質量分辨率輝光放電質譜測量光伏級硅中微量元素的方法：Test Method for Measuring Trace Elements in Photovoltaic-Grade Silicon by High-Mass Resolution Glow Discharge Mass Spectrometry

. PV2-0709E——光伏設備通信接口指南（PV ECI）：Guide for PV Equipment Communication Interfaces －Unified communication standard between PV production equipment and the shop floor

. PV3-0310——用于光伏電池處理工藝的高純水指南：Guide for High Purity Water Used In Photovoltaic Cell Processing

. PV4-0710——用于光伏應用薄膜第五代襯底尺寸范圍的規范：Specification for range of 5th generation substrate sizes for thin-film Photovoltaic application

. PV5-1110——用于光伏行業的氧氣（大宗氣體）指南：Guide for Oxygen (O2), Bulk, Used In Photovoltaic Applications

. PV6-1110——用于光伏行業的氬氣（大宗氣體）指南：Guide for Argon (Ar), Bulk, Used In Photovoltaic Applications

. PV7-1110——用于光伏行業的氫氣（大宗氣體）指南：Guide for Hydrogen (H2), Bulk, Used In Photovoltaic Applications

. PV8-1110——用于光伏行業的氮氣（大宗氣體）指南：Guide for Nitrogen (N2), Bulk, Used In Photovoltaic Applications

. PV11-1110——用于光伏行業的氫氟酸規格說明：Specifications for Hydrofluoric Acid, Used In Photovoltaic Applications

. PV12-1110——用于光伏行業的磷酸規格說明：Specifications for Phosphoric Acid, Used In Photovoltaic Applications

. PV9-1110——利用非接觸式的微波反射光電導衰減法測量光伏用硅材料的多余載流子壽命的測量方法：Test Method for Excess Charge Carrier Lifetime in PV Silicon Materials by Non-Contact Measurements of Photoconductivity Decay By Microwave Reflectance

. PV10-1110——用儀器中子活化分析測量硅材料的方法：Test Method for Instrumental Neutron Activation Analysis (INAA) Of Silicon

查詢進一步信息，請訪問http://www.corporate.semi.org.cn/。